Applied Chemical Engineering

Passivation effect analysis of passivation layer based on data analysis

Peng Li

Shanghai DianJi University

Jun Wang

Shanghai DianJi University

DOI: https://doi.org/10.24294/ace.v4i2.1346

Keywords: MOS Model, Database, Defect Density, Fixed Charge Density

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Abstract

The passivation layer of solar cells directly affects the performance of solar cells. The fixed charge density and defect density at the interface of the passivation layer are the key parameters to analyze the passivation effect. Through establishing the MOS model to simulate the capacitance-voltage (C-V) curve of the passivation layer, and using the function to express the simulation curve, this paper establishes the function-based database. The C-V curve obtained from the experiment is compared with the database to find the corresponding function of the experimental data. The passivation parameters N_f and D_it are extracted for analyzing the passivation effect of the passivation layer.

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