Applied Chemical Engineering

Study on properties of silicon nitride film prepared by PECVD for solar cells

Ziyou Zhou

The 48th Research Institute of China Electronics Technology Group Corporation

Xianwu Cai

Hunan Red Sun Photoelectricity Science and Technolgy Co., Ltd.

Wenfeng Liu

The 48th Research Institute of China Electronics Technology Group Corporation

DOI: https://doi.org/10.24294/ace.v4i2.1356

Keywords: PECVD, Fourier Transform Infrared, Silicon Nitride Film, Passivation

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Abstract

Silicon nitride film containing hydrogen is widely used as antireflection layer and passivation layer in the field of solar cell industrial production. Silicon nitride films containing hydrogen were prepared by industrial plasma enhanced chemical vapor deposition (PECVD) equipment. Fourier Transform Infrared Spectroscopy (FTIR) was used to analyze the composition of the film, to study the influence of reaction gas flow rate and high-frequency power on the composition and properties of the film, and to study the influence of silicon nitride film composition on the passivation effect of the silicon wafer through the minority carrier life of the silicon wafer, so as to clarify the direction of process adjustment in actual industrial production.

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